Barbara Terheiden will chair the nPV-workshop taking place March 30-31, 2022 in Konstanz. Check out for the call for abstracts 2022.npv-workshop.comRead more
The electrochemical porosification of silicon is used to prepare the surface of a silicon wafer in such a way that a transfer of a silicon layer epitaxially grown on the porous silicon is possible.
The very thin silicon wafers require that the surfaces are provided with a high-quality passivation layer in order to utilise the potential offered by the Si material. The passivation is based on an effective reduction of the interfacial defect densities as well as the field effect, which reduces the concentration of one type of charge carrier on the surface.