Sputtered and otherwise deposited a-Si for Fabricating passivated screen- printed contacts for an indUstrially feasible productioN
Project summary
The overall aim of the project is to provide highly performing photovoltaics and reduce the cost of solar technology. Therefore, we selected the EpiWafer process (epitaxially grown Si wafers) to produce highly cost-effective Si wafers and combine them with a high efficiency silicon solar cell process based on the approach of passivated contacts and screen-printing metallization. Therefore, this project develops and characterizes on the one hand a specific gettering process and on the other hand screen-printing metal pastes for contacting doped polycrystalline or amorphous Si layers.
Partners
- Universität Konstanz (DE), coodinator
- NexWafe GmbH (DE)
- Johnson Matthey (NL)
- Leibniz-Institute of Photonic Technology (DE)
Funding
Funding Agency | Contract No. and Title |
Federal Ministry for Economic Affairs and Energy, Germany | 03EE1022A 03EE1022B Electron beam evaporation and laser crystallization of silicon for passivated screen printed contacts |
RIjksdienst voor Ondernemend, Nederland | SOL18004 Sputtered and otherwise deposited a-Si for fabricating passivated screen-printed contacts for an industrially feasible production |